Product Summary
the BLF278 is a dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor. It encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange of the BLF278 provides the common source connection for the transistors.
Parametrics
BLF278 absolute maximum system: (1)VDS drain-source voltage - 110 V; (2)VGS gate-source voltage - ±20 V; (3)ID drain current (DC) - 18 A; (4)Tstg storage temperature -65 150 ℃; (5)Tj junction temperature - 200 ℃.
Features
BLF278 features: (1)High power gain; (2)Easy power control; (3)Good thermal stability; (4)Gold metallization ensures excellent reliability.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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BLF278 |
Advanced Semiconductor, Inc. |
Transistors RF MOSFET Power RF Transistor |
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BLF278,112 |
NXP Semiconductors |
Transistors RF MOSFET Power RF DMOS 250W VHF |
Data Sheet |
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BLF278/01,112 |
NXP Semiconductors |
Transistors RF MOSFET Power TRANSISTOR VHF PWR LDMOS |
Data Sheet |
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