Product Summary

The 2SK3170 is a silicon N Channel MOS FET UHF power amplifier.

Parametrics

2SK3170 absolute maximum ratings: (1)Drain to source voltage VDSS: 60 V; (2)Gate to source voltage VGSS: ±10 V; (3)Drain current ID: 16 A; (4)Drain peak current ID(pulse): 32 A; (5)Channel dissipation Pch: 252 W; (6)Channel temperature Tch: 175 ℃; (7)Storage temperature Tstg: –55 to +150 ℃.

Features

2SK3170 features: (1)High power output, High gain, High efficiency: P1dB = 220W , PG = 15.3dB , ηD = 61% (at P1dB) typ. (f = 860MHz); (2)Compact package: suitable for push - pull circuit.

Diagrams

2SK3170 package dimensions

2SK3001
2SK3001
Other

Data Sheet
Negotiable 
2SK3009
2SK3009
Other

Data Sheet
Negotiable 
2SK3012
2SK3012
Other

Data Sheet
Negotiable 
2SK3017(F)
2SK3017(F)
Toshiba
MOSFET MOSFET N-Ch 900V 8.5A Rdson 1.25 Ohm
Data Sheet
0-1: $3.89
1-10: $3.50
10-100: $3.09
100-250: $2.99
2SK3065T100
2SK3065T100
ROHM Semiconductor
MOSFET N-CH 60V 2A
Data Sheet
0-1: $0.34
1-25: $0.29
25-100: $0.26
100-500: $0.18
500-1000: $0.15
2SK3050TL
2SK3050TL
ROHM Semiconductor
MOSFET POWER MOSFET SURF MOUNT
Data Sheet
0-1: $0.59
1-25: $0.47
25-100: $0.35
100-500: $0.24