(China (Mainland))
Product Summary
The T508N16TOF is a Phase Control Thyristor.
Parametrics
T508N16TOF absolute maximum ratings: (1)repetitive peak forward off-state and reverse voltages:1600V to 1800V; (2)non-repetitive peak foward off-state voltage:1600V to 1800V; (3)non-repetitive peak reverse voltage:1700V to 1900V; (4)RMSM on-state current:800A; (5)average on-state current:508A; (6)surge current:6900A; (7)I2t-value:238A2s*103; (8)critical rate of rise of on-state current:120A/us; (9)critical rate of rise of off-state voltage:1000V/us.
Features
T508N16TOF features: (1)on-state voltage:1.92V; (2)threshold voltage:0.8V; (3)slope resistance:0.6mΩ; (4)gate trigger current:200mA; (5)gate trigger voltage:2V; (6)gate non-trigger current:5mA; (7)gate non-trigger voltage:0.2mV; (8)holding current:300mA; (9)latching current:1200mA; (10)forward off-state and reverse currents:50mA; (11)gate controlled delay time:4us.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 T508N16TOF |
Infineon Technologies |
Discrete Semiconductor Modules THY/DIODE DISC 50MM |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
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T508N12TOF |
Infineon Technologies |
Discrete Semiconductor Modules 510A 1200V 30MM DISK |
Data Sheet |
Negotiable |
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|
T508N14TOF |
Infineon Technologies |
Discrete Semiconductor Modules 1400V 509A SCR |
Data Sheet |
Negotiable |
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|
T508N16TOF |
Infineon Technologies |
Discrete Semiconductor Modules THY/DIODE DISC 50MM |
Data Sheet |
Negotiable |
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|
T508N18TOF |
Infineon Technologies |
SCR Modules 1.8KV 8KA |
Data Sheet |
Negotiable |
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