Product Summary

The KHB5D0N50F is a type of N channel MOS field effect transistor, which has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. The KHB5D0N50F is mainly suitable for electronic ballast and switching mode power supplies.

Parametrics

KHB5D0N50F maximum ratings: (1)Drain-Source Voltage: 500 V; (2)Gate-Source Voltage: 30 V; (3)Single Pulsed Avalanche Energy: 390 mJ; (4)Repetitive Avalanche Energy: 9.2 mJ; (5)Peak Diode Recovery: 3.5 V/ns; (6)Maximum Junction Temperature: 150℃; (7)Storage Temperature Range: -55 to 150℃.

Features

KHB5D0N50F features: (1)VDSS= 500V, ID= 5.0A; (2)Drain-Source ON Resistance :RDS(ON)=1.5Ω, VGS = 10V; (3)Qg(typ.) = 21nC.

Diagrams

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KHB5D0N50F
KHB5D0N50F

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KHB5D0N50F2
KHB5D0N50F2

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Negotiable