Product Summary

The K4075 is N-channel MOS FET designed for high current switching applications.

Parametrics

K4075 absolute maximum ratings: (1)Drain to Source Voltage (VGS = 0 V):40 V ; (2)Gate to Source Voltage (VDS = 0 V):±20 V ; (3)Drain Current (DC) (TC = 25℃):±60 A ; (4)Drain Current (pulse):±180 A ; (5)Total Power Dissipation (TC = 25℃):52 W ; (6)Total Power Dissipation (TA = 25℃):1.0 W ; (7)Channel Temperature:150℃; (8)Storage Temperature:–55℃ to +150℃; (9)Single Avalanche Current:28 A ; (10)Single Avalanche Energy:78 mJ.

Features

K4075 features: (1)Low on-state resistance:RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 30 A), RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 15 A) ; (2)Low Ciss: Ciss = 2900 pF TYP. ; (3)Logic level drive type .

Diagrams

K4075 test circuit