Product Summary

The ISL9N312AD3ST is a N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFET. It employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this ISL9N312AD3ST improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. The application of it is DC/DC converters.

Parametrics

ISL9N312AD3ST absolute maximum ratings: (1)Drain to Source Voltage:30 V; (2)Gate to Source Voltage:± 20 V; (3)Drain Current: Continuous (TC = 25℃, VGS = 10V):50A, Continuous (TC = 100℃, VGS = 4.5V):32 A, Continuous (TC = 25℃, VGS = 10V, RθJA = 52℃/W):11 A; (4)Power dissipation:75W, Derate above 25℃:0.5W/; (5)Operating and Storage Temperature:-55℃ to 175℃.

Features

ISL9N312AD3ST features: (1)Fast switching; (2)rDS(ON) = 0.010Ω (Typ), VGS = 10V; (3)rDS(ON) = 0.017Ω (Typ), VGS = 4.5V; (4)Qg (Typ) = 13nC, VGS = 5V; (5)Qgd (Typ) = 4.5nC; (6)CISS (Typ) = 1450pF.

Diagrams

ISL9N312AD3ST test circuit

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ISL9N312AD3ST
ISL9N312AD3ST

Fairchild Semiconductor

MOSFET N-Ch LL UltraFET PWM Optimized

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ISL9000
ISL9000

Other


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ISL9000A
ISL9000A

Other


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ISL9000AIRBBZ
ISL9000AIRBBZ


IC REG LDO 1.5V .3A 10-DFN

Data Sheet

0-1000: $0.51
ISL9000AIRBBZ-T
ISL9000AIRBBZ-T


IC REG LDO 1.5V .3A 10-DFN

Data Sheet

0-6000: $0.51
ISL9000AIRBCZ
ISL9000AIRBCZ


IC REG LDO 1.5V/1.8V .3A 10-DFN

Data Sheet

0-1000: $0.51
ISL9000AIRBCZ-T
ISL9000AIRBCZ-T


IC REG LDO 1.5V/1.8V .3A 10-DFN

Data Sheet

0-6000: $0.51