(China (Mainland))
Product Summary
The FS100R12KE3 is an IGBT module.
Parametrics
FS100R12KE3 absolute maximum ratings: (1)collector-emitter voltage:1200V; (2)DC-collector current:140A; (3)repetitive peak collector current:200A; (4)total power dissipation:480W; (5)gate-emitter peak voltage:±20V; (6)collector-emitter saturation voltage:2.00V; (7)gate threshold voltage:5.0V to 6.5V; (8)gate charge:7.5Ω; (9)input capacitance:7.10nF; (10)reverse transfer capacitance:0.30nF; (11)collector-emitter cut-off current:5.0mA; (12)gate-emitter leakage current:400nA; (13)turn-on delay time:0.29us; (14)rise time:0.05us; (15)turn-off delay time:0.52us.
Features
FS100R12KE3 features: (1)rated resistance:5.00kΩ; (2)deviation of R100:-5% to 5%; (3)power dissipation:20.0mW; (4)B-value:3375K.
Diagrams
| Image | Part No | Mfg | Description |  |
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 FS100R12KE3 |
Infineon Technologies |
IGBT Modules 1200V 100A 3-PHASE |
Data Sheet |
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FS100R12KE3_B3 |
Infineon Technologies |
IGBT Modules IGBT 1200V 100A |
Data Sheet |
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