(China (Mainland))
Product Summary
The FP50R12KE3 is an IGBT module.
Parametrics
FP50R12KE3 absolute maximum ratings: (1)repetitive peak reverse voltage:1600V; (2)maximum RMS current at Rectifier output:t.b.d; (3)DC forward current:50A; (4)surge forward current:400A; (5)I2t - value:800A2s; (6)collector-emitter voltage:1200V; (7)DC-collector current:75A; (8)repetitive peak collector current:100A; (9)total power dissipation:270W; (10)gate-emitter peak voltage:±20V.
Features
FP50R12KE3 features: (1)forward voltage:1.05V; (2)threshold voltage:0.8V; (3)slope resistance:6.5mΩ; (4)reverse current:3mA; (5)lead resistance, terminals-chip:4mΩ; (6)collector-emitter saturation voltage:2V; (7)gate threshold voltage:5.0V to 6.5V; (8)input capacitance:3.5nF; (9)collector-emitter cut off current:5mA; (10)gate-emitter leakage current:400nA; (11)turn on delay time (inductive load):90ns; (12)rise time (inductive load):45ns; (13)turn off delay time (inductive load):520ns; (14)fall time (inductive load):90ns; (15)turn-on energy loss per pulse:6.6mWs; (16)turn-off energy loss per pulse:5.8mWs; (17)SC Data:200A.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 FP50R12KE3 |
Infineon Technologies |
IGBT Modules 1200V 50A PIM |
Data Sheet |
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