Product Summary

The BUV39 is a type of silicon NPN oower transistor, which is designed for high current, high speed, high power applications.

Parametrics

BUV39 maximum ratings: (1)Collector-Emitter Voltage VBE=-1.5V, 160 V; (2)Collector-Emitter Voltage: 90 V; (3)Emitter-Base Voltage: 7 V; (4)Collector Current-Continuous: 25 A; (5)Collector Current-Peak: 45 A; (6)Base Current-Continuous: 6 A; (7)IBM Base Current- Peak: 9 A; (8)Collector Power Dissipation@TC=25℃: 120 W; (9)Junction Temperature: 200 ℃.

Features

BUV39 features: (1)Low Collector Saturation Voltage: VCE(sat)= 0.8V (Max.) @IC= 7.5A; (2)High Switching Speed.

Diagrams

BUV37
BUV37

Other


Data Sheet

Negotiable